Technologies for very high bandwidth electrical interconnects between next generation VLSI circuits

Author

Beyne, E.

Author_Institution

IMEC, Leuven, Belgium

fYear

2001

fDate

2-5 Dec. 2001

Abstract

The evolution of VLSI technology asks for an increasing bandwidth of the interconnects between IC´s and other system elements. For short interconnects, electrical signal lines still maintain the highest capacity and speed. In order to keep up with the increasing speed and density requirements, thin film multi-chip modules will have to be increasingly used. The capabilities and limitations of such interconnects are discussed. In order to push back some of these limitations, the third dimension will have to be used as well, resulting in 3D stacks, such as the Ultra-Thin Chip Stacking (UTCS) technology proposed.

Keywords

VLSI; integrated circuit interconnections; integrated circuit packaging; multichip modules; 3D multilayer thin film interconnect; 3D stacks; 3D wiring capability; density requirements; die embedding; die thinning; die transfer; electrical signal lines; next generation VLSI circuits; short interconnects; speed requirements; thin film multi-chip modules; ultra-thin chip stacking technology; very high bandwidth electrical interconnects; Bandwidth; Ceramics; Dielectric substrates; Dielectric thin films; Electronics packaging; Integrated circuit interconnections; Nonhomogeneous media; Thin film circuits; Transistors; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979562

Filename

979562