DocumentCode
2167190
Title
High speed silicon lateral trench detector on SOI substrate
Author
Min Yang ; Schaub, J. ; Rogers, D. ; Ritter, M. ; Rim, K. ; Welser, J. ; Byeongju Park
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2001
fDate
2-5 Dec. 2001
Abstract
Lateral trench photodetectors (LTD) on silicon-on-insulator (SOI) have been fabricated using a fully CMOS compatible process. High speed (2.0 GHz), high quantum efficiency (51%), and excellent frequency response characteristics have been achieved at 851 nm with a supply voltage of only 3.3 V.
Keywords
photodetectors; silicon-on-insulator; 2.0 GHz; 3.3 V; 51 percent; 851 nm; CMOS process; SOI substrate; Si; frequency response; high-speed silicon lateral trench photodetector; quantum efficiency; Absorption; Bandwidth; CMOS process; CMOS technology; Detectors; Fabrication; Frequency response; Photodetectors; Photodiodes; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979565
Filename
979565
Link To Document