• DocumentCode
    2167242
  • Title

    Design, modeling and simulation methodology for source synchronous DDR memory subsystems

  • Author

    Pham, N. ; Cases, M. ; Bandyopadhyay, J.

  • Author_Institution
    IBM Corp., Austin, TX, USA
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    267
  • Lastpage
    271
  • Abstract
    This paper describes the performance modeling and simulation methodology used to optimize the source synchronous timing equations for the system level interconnects. Actual double data rate (DDR) memory system configurations and timing specifications are used to describe the design methodology. The delay skew budget and noise margin allocation for the various components of the optimization equations are discussed in conjunction with their associated delay skew control techniques. This includes: Driver/receiver circuit design techniques, such as controlled driver´s impedance and edge rate and differential receivers; resistive termination schemes; board impedance and crosstalk controlled designs; etc. Finally, design guidelines are given for commercially available DDR SDRAMs designs using double pumped bus transfer rates
  • Keywords
    DRAM chips; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; DDR SDRAM DIMM; delay skew control; design optimization; noise margin; simulation model; source synchronous double data rate memory system; system level interconnect; timing; Circuit noise; Crosstalk; Delay; Design methodology; Driver circuits; Equations; Impedance; Integrated circuit interconnections; Optimization methods; Timing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-7803-5908-9
  • Type

    conf

  • DOI
    10.1109/ECTC.2000.853161
  • Filename
    853161