DocumentCode
2167242
Title
Design, modeling and simulation methodology for source synchronous DDR memory subsystems
Author
Pham, N. ; Cases, M. ; Bandyopadhyay, J.
Author_Institution
IBM Corp., Austin, TX, USA
fYear
2000
fDate
2000
Firstpage
267
Lastpage
271
Abstract
This paper describes the performance modeling and simulation methodology used to optimize the source synchronous timing equations for the system level interconnects. Actual double data rate (DDR) memory system configurations and timing specifications are used to describe the design methodology. The delay skew budget and noise margin allocation for the various components of the optimization equations are discussed in conjunction with their associated delay skew control techniques. This includes: Driver/receiver circuit design techniques, such as controlled driver´s impedance and edge rate and differential receivers; resistive termination schemes; board impedance and crosstalk controlled designs; etc. Finally, design guidelines are given for commercially available DDR SDRAMs designs using double pumped bus transfer rates
Keywords
DRAM chips; integrated circuit design; integrated circuit interconnections; integrated circuit modelling; DDR SDRAM DIMM; delay skew control; design optimization; noise margin; simulation model; source synchronous double data rate memory system; system level interconnect; timing; Circuit noise; Crosstalk; Delay; Design methodology; Driver circuits; Equations; Impedance; Integrated circuit interconnections; Optimization methods; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th
Conference_Location
Las Vegas, NV
Print_ISBN
0-7803-5908-9
Type
conf
DOI
10.1109/ECTC.2000.853161
Filename
853161
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