Surface-charge controlled AlGaN/GaN-power HFET without current collapse and gm dispersion

Author

Kikkawa, T. ; Nagahara, M. ; Okamoto, N. ; Tateno, Y. ; Yamaguchi, Y. ; Hara, N. ; Joshin, K. ; Asbeck, P.M.

Author_Institution

Fujitsu Labs. Ltd., Kanagawa, Japan

fYear

2001

fDate

2-5 Dec. 2001

Abstract

We demonstrate high voltage HFET operation with suppression of gm dispersion and current collapse using an n-type thin GaN cap layer combined with SiN passivation and a recessed ohmic structure. Polarization-induced surface charge was controlled. Off state and on-state breakdown voltages were 140 V and 70 V. We obtained power HFETs with high CW operation voltage of 35 V without any heat sinking method.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; ohmic contacts; passivation; power field effect transistors; semiconductor device breakdown; surface charging; wide band gap semiconductors; 140 V; 35 V; 70 V; AlGaN-GaN; CW operation voltage; DC characteristics; SN; SiN passivation; current collapse; high voltage HFET operation; microwave power applications; n-type thin GaN cap layer; off state breakdown voltages; on-state breakdown voltages; polarization-induced surface charge control; recessed ohmic structure; surface-charge controlled AlGaN/GaN-power HFET; transconductance dispersion; Aluminum gallium nitride; Breakdown voltage; Cogeneration; Gallium nitride; HEMTs; Heat sinks; MODFETs; Passivation; Polarization; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979574

Filename

979574