A SiGe BiCMOS W-Band LNA with 5.1 dB NF at 90 GHz

Author

Yang Yang ; Cacina, Seyhmus ; Rebeiz, Gabriel M.

Author_Institution

Univ. of California, San Diego, La Jolla, CA, USA

fYear

2013

fDate

13-16 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

This paper presents a W-band low-noise amplifier using an advanced 90nm SiGe BiCMOS technology. The 4-stage common-emitter amplifier results in a gain of 18-19 dB at 90-100 GHz with a 3-dB bandwidth of 75-105 GHz. The measured noise figure is <; 6.5 dB from 85-100 GHz and with a minimum of 5.1 dB at 90 GHz averaged over four different chips. An input P1dB of -20 dBm and an output P1dB/Psat of -3/+2.1 dBm was achieved at 90 GHz, with a power consumption of 43 mW. To our knowledge, this represents the lowest noise W-band amplifier to-date using silicon technologies.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; low noise amplifiers; millimetre wave amplifiers; 4-stage common-emitter amplifier; SiGe; SiGe BiCMOS W-band LNA; advanced SiGe BiCMOS technology; frequency 75 GHz to 105 GHz; gain 18 dB to 19 dB; low-noise amplifier; noise figure 5.1 dB; power 43 mW; power consumption; silicon technology; size 90 nm; BiCMOS integrated circuits; CMOS integrated circuits; Noise; Noise measurement; Semiconductor device measurement; Silicon germanium; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/CSICS.2013.6659207

Filename

6659207