DocumentCode
2167767
Title
Process using TiSi2 as a shallow contact metallization
Author
Manea, E. ; Divan, R. ; Stoica, M. ; Dunare, S.
Author_Institution
Nat. Inst. of Microtechnol., Bucharest, Romania
Volume
1
fYear
1997
fDate
7-11 Oct 1997
Firstpage
255
Abstract
Because of its low resistivity and excellent thermal stability, TiSi2 is finding widespread application as interconnect material in BiCMOS and power devices. The Ti-Si reaction is complex and has been studied in certain regimes. For diminishing the stress a new method for deposition is tried. The thermal conditions were established and the morphology of TiSi2 is explored with a X-ray powder diffractometer. TiSi2 is formed on Si(100) and Si(111) substrates. The electric performances were determinate by a Van der Pauw structure
Keywords
X-ray diffraction; contact resistance; electrical resistivity; elemental semiconductors; integrated circuit interconnections; integrated circuit metallisation; interface structure; internal stresses; semiconductor-metal boundaries; silicon; surface chemistry; thermal stability; titanium compounds; BiCMOS; Si; Si(100); Si(111); Si-TiSi2; Ti-Si reaction; TiSi2; Van der Pauw structure; X-ray powder diffractometer; electric performance; interconnect material; low resistivity; morphology; power devices; shallow contact metallization; stress; thermal stability; Annealing; BiCMOS integrated circuits; CMOS technology; Conductivity; Electric variables; Metallization; Silicides; Sputtering; Temperature; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location
Sinaia
Print_ISBN
0-7803-3804-9
Type
conf
DOI
10.1109/SMICND.1997.651592
Filename
651592
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