DocumentCode
2167822
Title
Base Resistance Scaling for Transistors of Various Geometries
Author
Yingying Yang ; Zampardi, P.J.
Author_Institution
Skyworks Solutions, Inc., Newbury Park, CA, USA
fYear
2013
fDate
13-16 Oct. 2013
Firstpage
1
Lastpage
4
Abstract
Base resistance is an important parameter for bipolar transistor performance and modeling. It can be calculated from simple inputs: base sheet resistance, geometries, and contact metal characteristic impedance. Because a variety of device geometries are used, it is useful to develop scaling equations for different transistor geometries. In this work, we develop generalized equations for the base resistance of multi-finger rectangular devices, ring devices, and horseshoe devices.
Keywords
bipolar transistors; electric impedance; scaling circuits; semiconductor device models; base resistance scaling; base sheet resistance; bipolar transistor; contact metal characteristic impedance; device geometries; horseshoe devices; multifinger rectangular devices; ring devices; scaling equations; transistor geometries; Fingers; Geometry; Mathematical model; Niobium; Resistance; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE
Conference_Location
Monterey, CA
Type
conf
DOI
10.1109/CSICS.2013.6659218
Filename
6659218
Link To Document