DocumentCode
2167974
Title
Experimental results on epitaxial-emitter and implanted-emitter high voltage silicon carbide diodes
Author
Locatelli, M.L. ; Planson, D. ; Ortolland, S. ; Lanois, F. ; Chante, J.P.
Author_Institution
INSA, CNRS, Villeurbanne, France
Volume
1
fYear
1997
fDate
7-11 Oct 1997
Firstpage
289
Abstract
Experimental results of reverse electrical characteristics of high voltage bipolar diodes are reported. Junction diameter, environment, and techniques for junction creation and periphery protection influences on breakdown are investigated. These results on mesa and planar structures are representative of the main current difficulties for reproducible realisation of SiC high power devices
Keywords
electric breakdown; semiconductor diodes; silicon compounds; wide band gap semiconductors; SiC; SiC high power devices; breakdown; epitaxial-emitter; high voltage bipolar diodes; implanted-emitter high voltage silicon carbide diodes; junction diameter; mesa structures; planar structures; reverse electrical characteristics; Aluminum; Breakdown voltage; Doping; Electric breakdown; Electric variables; Leakage current; Semiconductor diodes; Silicon carbide; Sputter etching; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location
Sinaia
Print_ISBN
0-7803-3804-9
Type
conf
DOI
10.1109/SMICND.1997.651600
Filename
651600
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