Vertically emitting AlAs/GaAs microcavities with quality factors exceeding 110.000

Author

Strauss, Michael ; Löffler, A. ; Reitzenstein, S. ; Hofmann, C. ; Kamp, M. ; Höfling, S. ; Forchel, A.

Author_Institution

Univ. Wurzburg, Wurzburg

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

High quality semiconductor microcavities have attracted considerable attention as a compact solid state platform for the investigation of light-matter interaction between photons and excitons in single quantum dots. Owing to a combined optimization of the design (increased number of mirror pairs), the growth conditions (V/III ratio) and the dry etching process we were able to achieve record quality (Q) factors beyond 100.000 for micropillars with diameters of 4 mum and Q factors as high as 29.000 for diameters of 2 mum.

Keywords

III-V semiconductors; Q-factor; aluminium compounds; excitons; gallium arsenide; microcavities; photoluminescence; semiconductor quantum dots; AlAs-GaAs; compact solid state platform; dry etching; excitons; high quality semiconductor microcavities; light-matter interaction; micropillars; photons; quality factors; single quantum dots; vertically emitting microcavities; Distributed Bragg reflectors; Etching; Gallium arsenide; Microcavities; Mirrors; Plasma confinement; Plasma temperature; Q factor; Quantum dots; Resonance;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4386686

Filename

4386686