• DocumentCode
    2168600
  • Title

    Organic thin film phototransistors and fast circuits

  • Author

    Gundlach, D.J. ; Zhou, L. ; Nichols, J.A. ; Huang, J.-R. ; Sheraw, C.D. ; Jackson, T.N.

  • Author_Institution
    Dept. of Electr. Eng., Penn State Univ., University Park, PA, USA
  • fYear
    2001
  • fDate
    2-5 Dec. 2001
  • Abstract
    We have fabricated organic thin film transistors (OTFTs) using the small-molecule organic semiconductor naphthacene as the active layer material with field-effect mobility greater than 0.1 cm/sup 2//V-s. This mobility is acceptable for several large-area electronic applications. OTFTs fabricated using naphthacene films show a large photosensitivity, of potential interest for applications requiring phototransistors. The threshold voltage and subthreshold region electrical characteristics of naphthacene OTFTs allow the fabrication of OTFT circuits without active layer patterning and do not require the use of a level shift stage such as that used to fabricate pentacene OTFT circuits. 5-stage ring oscillators fabricated with naphthacene OTFTs have single-stage propagation delay of less than 28 /spl mu/s; the fastest organic circuits reported to date.
  • Keywords
    delays; high-speed integrated circuits; molecular electronics; organic semiconductors; phototransistors; thin film transistors; 28 mus; 5-stage ring oscillators; OTFT circuits; active layer material; fast organic circuits; field-effect mobility; large-area electronic applications; naphthacene; organic thin film transistors; photosensitivity; single-stage propagation delay; small-molecule organic semiconductor; subthreshold region electrical characteristics; thin film phototransistors; threshold voltage; Organic materials; Organic semiconductors; Organic thin film transistors; Phototransistors; Semiconductor films; Semiconductor materials; Semiconductor thin films; Thin film circuits; Thin film transistors; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
  • Conference_Location
    Washington, DC, USA
  • Print_ISBN
    0-7803-7050-3
  • Type

    conf

  • DOI
    10.1109/IEDM.2001.979621
  • Filename
    979621