TDDB and BTI reliabilities of high-k stacked gate dielectrics - Impact of initial traps in high-k layer -

Author

Okada, Kenji ; Ota, Hiroyuki ; Nabatame, Toshihide ; Toriumi, Akira

Author_Institution

MIRAI-ASET, Tsukuba

fYear

2008

fDate

2-4 June 2008

Firstpage

87

Lastpage

90

Abstract

Reliabilities of high-k stacked gate dielectrics are discussed from the viewpoint of the impact of initial traps in high-k layer. TDDB reliability can be explained by the generated subordinate carrier injection (GSCI) model. While initial traps increase the leakage current, they do not degrade the TDDB reliability. In contrast, the BTI reliability is strongly degraded by initial traps.

Keywords

electric breakdown; high-k dielectric thin films; leakage currents; reliability; thermal stability; BTI reliabilities; TDDB reliabilities; generated subordinate carrier injection model; high-k layer; high-k stacked gate dielectrics; initial traps; leakage current; Breakdown voltage; Charge carrier processes; Degradation; Dielectric breakdown; Electric breakdown; Electron traps; High K dielectric materials; High-K gate dielectrics; Materials reliability; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on

Conference_Location

Austin, TX

Print_ISBN

978-1-4244-1810-7

Electronic_ISBN

978-1-4244-1811-4

Type

conf

DOI

10.1109/ICICDT.2008.4567253

Filename

4567253