DocumentCode
2169032
Title
Built-In Self-Test for Capacitive MEMS Using a Charge Control Technique
Author
Basith, Iftekhar Ibne ; Kandalaft, Nabeeh ; Rashidzadeh, Rashid
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada
fYear
2010
fDate
1-4 Dec. 2010
Firstpage
135
Lastpage
140
Abstract
A new Built-in Self-Test (BIST) method for capacitive Micro-Electrical-Mechanical System (MEMS) devices using charge-control method has been developed in which the Device Under Test (DUT) is stimulated through current sources. The DUT output signals are first converted to time domain intervals and then measured through a precision Time-to-Digital converter (TDC). The proposed BIST scheme supports self-calibration and produces robust results under process, supply and temperature variations. Simulation results indicate that this method can successfully detect minor structural defects altering the MEMS nominal capacitance by 70af.
Keywords
analogue-digital conversion; built-in self test; calibration; capacitive sensors; micromechanical devices; MEMS nominal capacitance; built-in self-test; capacitive MEMS; charge control technique; device under test; microelectrical-mechanical system; self-calibration; time-to-digital converter; Built-in self-test; Calibration; Capacitance; Capacitors; Delay; Delay lines; Micromechanical devices; built-in self-test; device under test; test for MEMS; time-to-digital converter;
fLanguage
English
Publisher
ieee
Conference_Titel
Test Symposium (ATS), 2010 19th IEEE Asian
Conference_Location
Shanghai
ISSN
1081-7735
Print_ISBN
978-1-4244-8841-4
Type
conf
DOI
10.1109/ATS.2010.32
Filename
5692236
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