• DocumentCode
    2169032
  • Title

    Built-In Self-Test for Capacitive MEMS Using a Charge Control Technique

  • Author

    Basith, Iftekhar Ibne ; Kandalaft, Nabeeh ; Rashidzadeh, Rashid

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada
  • fYear
    2010
  • fDate
    1-4 Dec. 2010
  • Firstpage
    135
  • Lastpage
    140
  • Abstract
    A new Built-in Self-Test (BIST) method for capacitive Micro-Electrical-Mechanical System (MEMS) devices using charge-control method has been developed in which the Device Under Test (DUT) is stimulated through current sources. The DUT output signals are first converted to time domain intervals and then measured through a precision Time-to-Digital converter (TDC). The proposed BIST scheme supports self-calibration and produces robust results under process, supply and temperature variations. Simulation results indicate that this method can successfully detect minor structural defects altering the MEMS nominal capacitance by 70af.
  • Keywords
    analogue-digital conversion; built-in self test; calibration; capacitive sensors; micromechanical devices; MEMS nominal capacitance; built-in self-test; capacitive MEMS; charge control technique; device under test; microelectrical-mechanical system; self-calibration; time-to-digital converter; Built-in self-test; Calibration; Capacitance; Capacitors; Delay; Delay lines; Micromechanical devices; built-in self-test; device under test; test for MEMS; time-to-digital converter;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Symposium (ATS), 2010 19th IEEE Asian
  • Conference_Location
    Shanghai
  • ISSN
    1081-7735
  • Print_ISBN
    978-1-4244-8841-4
  • Type

    conf

  • DOI
    10.1109/ATS.2010.32
  • Filename
    5692236