• DocumentCode
    2169088
  • Title

    16Mb Split Gate Flash Memory with Improved Process Window

  • Author

    Yater, J. ; Suhail, M. ; Kang, Shih-Tsung ; Shen, Jianbing ; Hong, Chuan ; Merchant, T. ; Gasquet, R.R.H. ; Loiko, K. ; Winstead, B. ; Williams, S. ; Rossow, M. ; Malloch, W. ; Syzdek, R. ; Chindalore, G.

  • Author_Institution
    Technol. Solutions Organ., Freescale Semicond., Austin, TX
  • fYear
    2009
  • fDate
    10-14 May 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper reports on recent bitcell optimizations that improve drive current and program performance. The 16 Mb and 32 Mb array results are best to-date for nanocrystal memories and suggest a robust, reliable array operation.
  • Keywords
    flash memories; nanostructured materials; nanotechnology; storage media; Si; bitcell optimizations; drive current; memory size 16 MByte; memory size 32 MByte; nanocrystal memories; process window; reliability; split gate flash memory; Character generation; Degradation; Flash memory; Implants; Memory architecture; Nanocrystals; Robustness; Silicon; Split gate flash memory cells; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop, 2009. IMW '09. IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4244-3762-7
  • Type

    conf

  • DOI
    10.1109/IMW.2009.5090570
  • Filename
    5090570
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2169088