Monte Carlo simulation of ion implantation (3-dimensional) and defect modeling during implantation process

Author

Li, D. ; Lin, L. ; Wang, G. ; Chen, Y. ; Shrivastav, G. ; Oak, S. ; Tasch, A.F. ; Banerjee, S.K.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

2001

fDate

2-5 Dec. 2001

Abstract

In this paper, we report a new computationally efficient three-dimensional Monte Carlo simulator for ion implantation into topographically complex structures. Significant improvement of CPU time over previous simulators has been achieved. Both the Kinchin-Pease (KP) and the Kinetic Accumulative Damage Model (KADM) have been incorporated into this new simulator. Based on KADM, detailed defect information, such as cluster size, type, distribution and End-Of-Range (EOR) defects could be obtained.

Keywords

Monte Carlo methods; diffusion; impurity-defect interactions; interstitials; ion implantation; semiconductor process modelling; vacancies (crystal); CPU time; Kinchin-Pease model; cluster size; defect distribution; defect modeling; defect type; dopant-vacancy clusters; end-of-range defect; interstial-vacancy separation; ion implantation; kinetic accumulative damage model; three-dimensional Monte Carlo simulator; three-dimensional trajectory replication scheme; topographically complex structures; transient enhanced diffusion; Artificial intelligence; Computational efficiency; Computational modeling; Implants; Ion implantation; Monte Carlo methods; Physics computing; Semiconductor device modeling; Silicon; Surfaces;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7050-3

Type

conf

DOI

10.1109/IEDM.2001.979647

Filename

979647