DocumentCode
2169628
Title
The future of flash memory: Is floating gate technology doomed to lose the race?
Author
Wellekens, Dirk ; Van Houdt, Jan
fYear
2008
fDate
2-4 June 2008
Firstpage
189
Lastpage
194
Abstract
Since the very beginning of the flash memory era, the market has been dominated by the floating gate technology. However, as floating gate flash continues along a very steep scaling path, more and more barriers start to appear, limiting further scaling possibilities of the technology. At the same time, other concepts are preparing to take over. This paper concentrates on the prospect of high-k materials to extend floating gate scaling and explores the possibilities and promises these materials offer to further extend the floating gate concept as the dominant flash technology.
Keywords
dielectric materials; flash memories; random-access storage; flash memory; floating gate scaling; floating gate technology; high-k materials; nonvolatile memory; Aluminum oxide; Character generation; Dielectric losses; Flash memory; High K dielectric materials; High-K gate dielectrics; Nonvolatile memory; Semiconductor materials; Silicon on insulator technology; Voltage; Flash memory; floating gate; high-k materials; nonvolatile memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
Conference_Location
Austin, TX
Print_ISBN
978-1-4244-1810-7
Electronic_ISBN
978-1-4244-1811-4
Type
conf
DOI
10.1109/ICICDT.2008.4567276
Filename
4567276
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