DocumentCode
2169797
Title
High performance 0.1 /spl mu/m PD SOI tunneling-biased MOSFETs (TBMOS)
Author
Kuo-Nan Yang ; Yi-Lin Chan ; Yu-Lin Chu ; Hou-Yu Chen ; Fu-Liang Yang ; Chenming Hu
Author_Institution
TSMC, Hsin-Chu, Taiwan
fYear
2001
fDate
2-5 Dec. 2001
Abstract
Proposes a new structure of partially-depleted SOI MOSFETs tunneling-biased MOSFETs (TBMOS). In this structure, the floating body potential is pulled up by the carriers which tunnel from specially doped polysilicon gate to the floating body. Compared with bulk MOSFET (represented by body grounded device), TBMOS produces excellent swing (/spl sim/66 mV/dec), and >15% increase in I/sub D,SAT/. TBMOS also has better hot carrier immunity than body grounded device.
Keywords
MOSFET; hot carriers; silicon-on-insulator; tunnelling; 0.1 micron; Si; TBMOS; floating body potential; hot carrier immunity; partially-depleted SOI MOSFETs; polysilicon gate; tunneling-biased MOSFETs; Displays; Electrons; Hot carriers; Immune system; MOSFETs; Microelectronics; Subthreshold current; Threshold voltage; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979668
Filename
979668
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