DocumentCode
2169866
Title
1.6 w/mm, 26% PAE AlGaN/GaN HEMT operation at 29GHz
Author
Sandhu, R. ; Wojtowicz, M. ; Barsky, M. ; Tsai, R. ; Smorchkova, I. ; Namba, C. ; Liu, P.H. ; Dia, R. ; Truong, M. ; Ko, D. ; Yang, J.W. ; Wang, H. ; Khan, M.A.
Author_Institution
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fYear
2001
fDate
2-5 Dec. 2001
Abstract
In this paper, we report the first GaN HEMT power device to operate at 29 GHz. The 0.2 μm T-gate AlGaN/GaN HEMT with a 120 μm total gate periphery exhibited a pulsed output power of 1.6 W/mm with a gain of 6.7 dB and an associated power aided efficiency of 26% at 29 GHz. The epitaxial layers were grown by MOCVD on SiC.
Keywords
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; vapour phase epitaxial growth; wide band gap semiconductors; 0.2 micron; 120 micron; 26 percent; 29 GHz; 6.7 dB; AlGaN-GaN; AlGaN/GaN HEMT; GaN HEMT power device; Ka-band operation; MOCVD growth; SiC; SiC substrate; T-gate HEMT; epitaxial layers; high electron mobility transistors; Aerospace electronics; Aluminum gallium nitride; Circuits; Epitaxial layers; Gain; Gallium nitride; HEMTs; Plasma measurements; Power generation; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2001. IEDM '01. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7050-3
Type
conf
DOI
10.1109/IEDM.2001.979670
Filename
979670
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