• DocumentCode
    2169990
  • Title

    NAND Flash Scaling Beyond 20nm

  • Author

    Koh, Yohwan

  • Author_Institution
    Flash Dev. Div., Hynix Semicond. Inc., Icheon
  • fYear
    2009
  • fDate
    10-14 May 2009
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    With the advent of prevailing mobile devices in our daily lives, the densities of nonvolatile memory, especially NAND Flash suitable for mobile devices become higher and higher, and Flash memory applications will be constantly increased in the future due to their non-volatility and high capacity. Therefore it is very meaningful and important to summarize where NAND Flash memory technology is now, what kinds of challenges have to be overcome, and what the promising candidates will be in the future. In this paper, we present the major scaling issues and performance requirements for NAND Flash with advancing technology nodes, and we also show directions for new emerging technologies beyond 20 nm technology node.
  • Keywords
    NAND circuits; flash memories; NAND flash scaling; mobile device; nonvolatile memory; size 20 nm; Doping; Error correction codes; Etching; Flash memory; Fluctuations; Interference; Lithography; Nonvolatile memory; Space technology; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Memory Workshop, 2009. IMW '09. IEEE International
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4244-3762-7
  • Type

    conf

  • DOI
    10.1109/IMW.2009.5090600
  • Filename
    5090600