DocumentCode
2170596
Title
Parallel electrical spin preparation in InGaAs/GaAs quantum dots with high fidelity
Author
Löffler, W. ; Mauser, C. ; Höpcke, N. ; Kalt, H. ; Li, S. ; Passow, T. ; Reimer, H. ; Hetterich, M.
Author_Institution
Univ. Karlsruhe, Karlsruhe
fYear
2007
fDate
17-22 June 2007
Firstpage
1
Lastpage
1
Abstract
The concurrent initialization of spin-polarized electrons in several semiconductor quantum dots is of major importance for quantum information processing as well as for some spintronics applications. We realized the quantum match to the classical register storage, the quantum register, with a couple of self-organized semiconductor quantum dots. The first step is to initialize a single electron in each dot, all with the same spin orientation with respect to an external magnetic field.
Keywords
III-V semiconductors; electron spin polarisation; gallium arsenide; indium compounds; magnetic semiconductors; semiconductor quantum dots; InGaAs-GaAs; InGaAs/GaAs quantum dots; external magnetic field; parallel electrical spin preparation; semiconductor quantum dots; spin-polarized electrons; Electrons; Gallium arsenide; Indium gallium arsenide; Information processing; Magnetic fields; Magnetoelectronics; Optical polarization; Quantum dots; Quantum mechanics; Semiconductor nanostructures;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location
Munich
Print_ISBN
978-1-4244-0931-0
Electronic_ISBN
978-1-4244-0931-0
Type
conf
DOI
10.1109/CLEOE-IQEC.2007.4386766
Filename
4386766
Link To Document