• DocumentCode
    2170596
  • Title

    Parallel electrical spin preparation in InGaAs/GaAs quantum dots with high fidelity

  • Author

    Löffler, W. ; Mauser, C. ; Höpcke, N. ; Kalt, H. ; Li, S. ; Passow, T. ; Reimer, H. ; Hetterich, M.

  • Author_Institution
    Univ. Karlsruhe, Karlsruhe
  • fYear
    2007
  • fDate
    17-22 June 2007
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    The concurrent initialization of spin-polarized electrons in several semiconductor quantum dots is of major importance for quantum information processing as well as for some spintronics applications. We realized the quantum match to the classical register storage, the quantum register, with a couple of self-organized semiconductor quantum dots. The first step is to initialize a single electron in each dot, all with the same spin orientation with respect to an external magnetic field.
  • Keywords
    III-V semiconductors; electron spin polarisation; gallium arsenide; indium compounds; magnetic semiconductors; semiconductor quantum dots; InGaAs-GaAs; InGaAs/GaAs quantum dots; external magnetic field; parallel electrical spin preparation; semiconductor quantum dots; spin-polarized electrons; Electrons; Gallium arsenide; Indium gallium arsenide; Information processing; Magnetic fields; Magnetoelectronics; Optical polarization; Quantum dots; Quantum mechanics; Semiconductor nanostructures;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
  • Conference_Location
    Munich
  • Print_ISBN
    978-1-4244-0931-0
  • Electronic_ISBN
    978-1-4244-0931-0
  • Type

    conf

  • DOI
    10.1109/CLEOE-IQEC.2007.4386766
  • Filename
    4386766