An impact analysis of gate resistance on static and dynamic dissipation of IGBT modules

Author

Hu, Shao-Wei ; Zhu, Yang-Jun ; Duan, Yao-Yu

Author_Institution

Opt. Commun. Technol. Inst., Chongqing Univ. of Posts & Telecommun., Chongqing, China

fYear

2011

fDate

9-11 Sept. 2011

Firstpage

715

Lastpage

718

Abstract

Gate resistor (R_G) has a significant impact on the performances of drive circuit. At first, this paper theoretically analyzes the influence of gate resistor on those parameters including switching behavior, electromagnetic interference (EMI), overvoltage and dv/dt induced current. Then it discusses how to select a suitable drive module for the selected R_G from the view of applications. The recommended gate resistors in the applications are also given. At last, some principles and techniques in circuit layout are talked. This paper can provide some references for circuit designers.

Keywords

driver circuits; electromagnetic interference; insulated gate bipolar transistors; overvoltage; resistors; EMI; IGBT module; circuit layout; drive circuit; dv-dt induced current; dynamic dissipation; electromagnetic interference; gate resistance; gate resistor; impact analysis; overvoltage; static dissipation; switching behavior; Electromagnetic interference; Insulated gate bipolar transistors; Layout; Logic gates; Performance evaluation; Resistors; Switches; EMI; IGBT; driver circuit; gate resistor; overvoltage; switching behavior;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Control (ICECC), 2011 International Conference on

Conference_Location

Ningbo

Print_ISBN

978-1-4577-0320-1

Type

conf

DOI

10.1109/ICECC.2011.6066394

Filename

6066394