Wide Band Frequency Characterization of High Permittivity Dielectrics (High-K) for RF MIM Capacitors Integrated in BEOL

Author

Lacrevaz, T. ; Fléchet, B. ; Farcy, A. ; Torres, J. ; Vo, T.T. ; Bermond, C. ; Cueto, O. ; Defaÿ, E. ; Gros-Jean, M. ; Blampey, B. ; Angénieux, G. ; Piquet, J. ; De Crécy, F.

Author_Institution

LACH, Univ. de Savoie

fYear

2006

fDate

5-7 June 2006

Firstpage

78

Lastpage

80

Abstract

High permittivity insulators (high-k) are progressively introduced in high-speed integrated passives and devices in order to optimize circuit performances. However, high-k properties are expected to vary with frequency as relaxation and resonance mechanisms occur. It is necessary to analyze and evaluate high-k behaviour from DC to microwave frequency. Real permittivity (K or epsiv\´_r) and losses (eepsiv"_r) extraction is required over a wide band of frequency to select the most suitable insulator. The proposed method enables the characterization of as deposited thin (down to 60 nm) planar dielectrics integrated below a copper coplanar wave-guide up to 40 GHz. Results of Ta₂O₅ and STO insulators are presented in this paper

Keywords

MIM devices; coplanar waveguides; high-k dielectric thin films; tantalum compounds; thin film capacitors; BEOL; RF MIM capacitor; STO insulators; Ta₂O₅; copper coplanar waveguide; high permittivity dielectrics; high-k behaviour; thin planar dielectrics; wide band frequency characterization; Dielectrics and electrical insulation; High K dielectric materials; High speed integrated circuits; High-K gate dielectrics; MIM capacitors; Mechanical factors; Permittivity; Radio frequency; Resonance; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2006 International

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-0104-6

Type

conf

DOI

10.1109/IITC.2006.1648651

Filename

1648651