DocumentCode
2171968
Title
Realisation of semiconductor optical amplifiers with homogeneous carrier density and low noise factor
Author
Pommereau, F. ; Brenot, R. ; Landreau, J. ; Gouezigou, L.L. ; Gouezigou, O.L. ; Lelarge, F. ; Martin, F. ; Poingt, F. ; Rousseau, B. ; Duan, G.H. ; Thédrez, B.
Author_Institution
Alcatel-Thales III-V Lab., Marcoussis, France
fYear
2005
fDate
8-12 May 2005
Firstpage
102
Lastpage
105
Abstract
Buried ridge hetero-structure with p-n blocking layers semiconductor optical amplifiers have been designed and fabricated. Noise figure as low as 6.5 dB has been obtained in the case of low spatial hole burning, by optimising the confinement factor.
Keywords
carrier density; laser noise; optical fabrication; optical hole burning; semiconductor device noise; semiconductor optical amplifiers; 6.5 dB; buried ridge heterostructure; confinement factor; homogeneous carrier density; low noise factor; optimisation; p-n blocking layers; semiconductor optical amplifier design; semiconductor optical amplifier fabrication; spatial hole burning; Carrier confinement; Charge carrier density; Etching; Noise figure; Optical noise; Optical saturation; Plasma chemistry; Semiconductor device noise; Semiconductor optical amplifiers; Silicon compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517430
Filename
1517430
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