• DocumentCode
    2172132
  • Title

    SOI materials defect characterization

  • Author

    Pham, Daniel T. ; Bich-Yen Nguyen ; O´Meara, David ; Wang, Victor ; Nguyen, Bich-yen ; Smith, James ; Veteran, Janice ; Mendicino, Michael ; Campbell, Andy

  • Author_Institution
    Motorola Inc., Austin, TX, USA
  • fYear
    1997
  • fDate
    6-9 Oct 1997
  • Firstpage
    144
  • Lastpage
    145
  • Abstract
    In this study, the SOI wafers made by various bonding or implant techniques were extensively characterized for physical defects using various metrologies such as optical, X-ray, electron microscopy and SIMS. Defect characterization was performed as received from vendors and after thinning the SOI layer by oxidation and oxide removal
  • Keywords
    silicon-on-insulator; SIMS; SOI material; Si; X-ray analysis; bonding; defect metrology; electron microscopy; implantation; optical analysis; oxidation; oxide removal; thinning; Annealing; Chemical technology; Cleaning; Fabrication; Optical microscopy; Silicon on insulator technology; Surface contamination; Temperature; Wafer bonding; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1997. Proceedings., 1997 IEEE International
  • Conference_Location
    Fish Camp, CA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-3938-X
  • Type

    conf

  • DOI
    10.1109/SOI.1997.634974
  • Filename
    634974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2172132