• DocumentCode
    2172460
  • Title

    Electronic and optical properties of copper doped InP single crystals

  • Author

    Zdansky, K. ; Pekarek, L. ; Hlidek, P.

  • Author_Institution
    Inst. of Radio Eng. & Electron., ASCR, Prague, Czech Republic
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    171
  • Lastpage
    174
  • Abstract
    Annealed wafers of Czochralski grown copper doped InP were investigated by temperature dependent Hall measurements and low-temperature Fourier transform infrared absorption. New peaks around 2100 cm-1 were interpreted as due to Cu2+ 3d internal transitions.
  • Keywords
    Fourier transform spectra; Hall effect; III-V semiconductors; copper; indium compounds; infrared spectra; 2100 cm-1; Cu2+ 3d internal transitions; Czochralski grown copper doped InP; InP:Cu; annealed wafers; electronic properties; low-temperature Fourier transform infrared absorption; optical properties; single crystals; temperature dependent Hall measurements; Copper; Crystals; Electromagnetic wave absorption; Fourier transforms; Indium phosphide; Iron; Physics; Semiconductor materials; Temperature dependence; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517447
  • Filename
    1517447
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2172460