DocumentCode
2172651
Title
Kink effect in InAlAs/InGaAs short-channel HEMTs: influence on the dynamic and noise performance
Author
Vasallo, B.G. ; Mateos, J. ; Pardo, D. ; González, T.
Author_Institution
Dept. de Fisica Aplicada, Salamanca Univ., Spain
fYear
2005
fDate
8-12 May 2005
Firstpage
188
Lastpage
191
Abstract
The degradation introduced by the kink effect in the dynamic and noise performance of an InAlAs/InGaAs 100 nm gate high electron mobility transistor is analyzed by using Monte Carlo simulations.
Keywords
aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor device noise; InAlAs-InGaAs; InAlAs-InGaAs short-channel HEMT degradation; Monte Carlo simulations; dynamic performance; high electron mobility transistor; kink effect; noise performance; Analytical models; Circuit simulation; Degradation; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; MODFETs; Spontaneous emission; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517453
Filename
1517453
Link To Document