DocumentCode
2172678
Title
Modelling of InP HEMTs with high indium content channels
Author
Kalna, K. ; Elgaid, K. ; Thayne, I. ; Asenov, A.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear
2005
fDate
8-12 May 2005
Firstpage
192
Lastpage
195
Abstract
Performance of sub-100 nm InP HEMTs with various indium contents in the channel is studied using an ensemble Monte Carlo device simulator. A detail insight into the non-equilibrium electron transport in the InGaAs channel is reported.
Keywords
III-V semiconductors; Monte Carlo methods; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; InGaAs; InGaAs channel; InP; InP HEMTs modelling; ensemble Monte Carlo device simulator; high indium content channels; nonequilibrium electron transport; variable indium content; Acoustic scattering; Electron optics; HEMTs; Indium gallium arsenide; Indium phosphide; MODFETs; Monte Carlo methods; Optical buffering; Optical scattering; Phonons;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517454
Filename
1517454
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