EL emission from TlInGaAs/GaAs quantum well LEDs and LDs

Author

Mukai, T. ; Matsumoto, T. ; Fujiwara, A. ; Hasegawa, S. ; Asahi, H.

Author_Institution

Inst. of Sci. & Ind. Res., Osaka Univ., Japan

fYear

2005

fDate

8-12 May 2005

Firstpage

227

Lastpage

230

Abstract

We have fabricated the TlInGaAs quantum well structures on GaAs(100) substrates and demonstrated the electroluminescence (EL) emission up to 300K. Compared with the InGaAs quantum well reference samples, we confirmed that the temperature-variation of EL peak energy was decreased by the addition of Tl into InGaAs. We also demonstrated the pulsed current injection laser oscillation for the TlInGaAs/GaAs double quantum wells laser diodes with InGaP layers as cladding layers.

Keywords

III-V semiconductors; electroluminescence; gallium arsenide; indium compounds; light emitting diodes; semiconductor lasers; semiconductor quantum wells; thallium compounds; GaAs substrates; LDs; LEDs; TlInGaAs-GaAs; cladding layers; double quantum wells laser diodes; electroluminescence peak energy; electroluminescene emission; pulsed current injection laser oscillation; semiconductor quantum well structures; Diode lasers; Electroluminescence; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Light emitting diodes; Optical pulses; Semiconductor lasers; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517463

Filename

1517463