Epitaxial wafer quality versus substrate quality

Author

Suzuki, Kenji ; Noda, Akira ; Nakamura, Masashi ; Kawabe, Manabu ; Akamatsu, Kazuhiro ; Kurita, Hideki ; Hirano, Ryuichi

Author_Institution

Compound Semicond. Mater. Dept., Nikko Mater. Co. Ltd., Ibaraki, Japan

fYear

2005

fDate

8-12 May 2005

Firstpage

231

Lastpage

232

Abstract

The effect of various InP substrates properties on epitaxial layer quality was investigated. From the results of experiments on MOCVD, we found that the average haze of epitaxial layer surfaces measured by surfscan can be reduced by using substrates with optimum surface mis-orientation angles of 0.05-0.10 degrees. Our experiments on MBE also showed a similar tendency. Furthermore it was found that appropriate treatment of substrates prevents slips on the periphery of epitaxial wafers.

Keywords

III-V semiconductors; MOCVD; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; slip; substrates; surface roughness; InP; InP substrates properties; MOCVD; epitaxial layer surfaces; epitaxial wafer quality; haze reduction; molecular beam epitaxial growth; slip prevention; substrate quality; surface misorientation angles; surface roughness; surfscan; Epitaxial growth; Epitaxial layers; Indium phosphide; MOCVD; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface morphology; Surface roughness; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517464

Filename

1517464