• DocumentCode
    2173045
  • Title

    An ICP-RIE etching process for InP-based photonic crystals using Cl2/Ar/N2 chemistry

  • Author

    Strasser, P. ; Wüest, R. ; Robin, F. ; Rauscher, K. ; Wild, B. ; Erni, D. ; Jäckel, H.

  • Author_Institution
    Commun. Photonics Group, Eidgenossische Tech. Hochschule, Zurich, Switzerland
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    242
  • Lastpage
    245
  • Abstract
    We demonstrate the use of a Cl2/Ar/N2-mixture to etch InP/InGaAsP-photonic crystals. The influence of process parameters on hole depth and hole shape is discussed and the process is characterized using the internal-light-source technique.
  • Keywords
    III-V semiconductors; indium compounds; photonic crystals; sputter etching; Cl2/Ar/N2 chemistry; InP; InP-based photonic crystals; hole depth; hole shape; inductively coupled plasma reactive ion etching; internal-light-source technique; Argon; Chemistry; Etching; Helium; Indium phosphide; Microwave communication; Photonic crystals; Plasma applications; Plasma sources; Plasma temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517468
  • Filename
    1517468
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2173045