• DocumentCode
    2173168
  • Title

    Ohmic contacts of Pd/Zn/Pt(or Pd)/Au materials to p-type InP

  • Author

    Hwang, Sungmin ; Shim, Jongin ; Eo, Yungseon

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Hanyang Univ., Ansan, South Korea
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    260
  • Lastpage
    262
  • Abstract
    We investigated the contact resistivities of Au//M(=Pd or Pt)/Zn/Pd/p-InP, focusing on the role of the third metal, M. Both the lowest specific contact resistivity of 7×10-6 Ω·cm2 and a flat diffusion front were obtained for a sample with a Au/Pt/Zn/Pd/p-InP contact material after annealing at 400°C for 4 min.
  • Keywords
    III-V semiconductors; annealing; contact resistance; gold; indium compounds; ohmic contacts; palladium; platinum; zinc; 4 min; 400 C; Au-Pt-Zn-Pd-InP; Au-Pt-Zn-Pd-p-InP contact material; annealing; flat diffusion front; ohmic contacts; specific contact resistivities; Annealing; Conductivity; Costs; Gold; Indium phosphide; Ohmic contacts; Substrates; Surface morphology; Temperature; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517473
  • Filename
    1517473
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2173168