DocumentCode
2173476
Title
Effect of Input Harmonic Termination on High Efficiency HBT Amplifiers for Mobile Communications
Author
Ohta, Akira ; Matsuda, Shingo ; Goto, Seiki ; Inoue, Akira ; Choumei, Kenichiro ; Suzuki, Satoshi ; Hattori, Ryo ; Matsuda, Yoshio
Author_Institution
High Frequency & Optical Semiconductor Division, Mitsubishi Electric Corporation, 4-1 Mizuhara, Itami, Hyogo 664-8641, Japan. Phone: +81-727-84-7375, Fax: +81-727-80-2694, Email: aohta@lsi.melco.co.jp
fYear
2002
fDate
23-26 Sept. 2002
Firstpage
1
Lastpage
4
Abstract
The effect of an input harmonic termination on a HBT was investigated by simulation and waveform measurement. It was found that the best phase of the input reflection coefficient in the 2nd harmonic(¿s2fo) for high efficiency is from 180 to 240 degrees in class F operation. The best phase increases in accordance with the decrease of |¿s2fo|. The relationship between the best phase of ¿s2fo and |¿s2fo| is described by considering the current in the diode and capacitance between the base and emitter in the HBT.
Keywords
Capacitance; HEMTs; Heterojunction bipolar transistors; MODFETs; Mobile communication; Optical amplifiers; Radio frequency; Radiofrequency amplifiers; Semiconductor optical amplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2002. 32nd European
Conference_Location
Milan, Italy
Type
conf
DOI
10.1109/EUMA.2002.339393
Filename
4140473
Link To Document