Progress in skutterudite-based thermoelectric materials

Author

Wang, Jiyang ; Liu, Hong ; Hu, Xiaobo ; Jiang, Huaidong ; Zhao, Shanrong ; Li, Qiang ; Boughton, Robert I. ; Jiang, Minhua

Author_Institution

State Key Lab. of Crystal Mater., Shandong Univ., Jinan, China

fYear

2001

fDate

2001

Firstpage

89

Lastpage

92

Abstract

The progress in skutterudite-based thermoelectric materials in our group is reviewed. The effect of the filling fraction on the transport properties of skutterudite material was investigated. It has been found that the partially filled skutterudite with lower filling fraction has better electric transport properties than fully filled skutterudite. Raman scattering investigations on filled skutterudite with different filling fractions has indicated that the rattling degree of the filling atoms in the voids in skutterudite decreases with the increase of the filling fraction. Filled skutterudite NaFe₄P₁₂ nanowires of 25-80 nm in diameter and 500-4000 nm in length have been obtained by using novel hydrothermal-reduction-alloying method. The nanowire can be arrayed directionally the magnetic field. A polyaniline/skutterudite thermoelectric composite was synthesized by using an in situ compounding method. An investigation into the electric transport properties of the composite has been carried out

Keywords

Raman spectra; composite materials; infrared spectra; iron compounds; materials preparation; nanostructured materials; sodium compounds; thermoelectricity; 25 to 80 nm; IR spectra; NaFe₄P₁₂; Raman scattering; filling fraction; hydrothermal-reduction; nanowires; partially filled skutterudite; polyaniline; skutterudite-based thermoelectric materials; thermoelectric composite; Composite materials; Conducting materials; Crystalline materials; Filling; Laboratories; Lattices; Nanowires; Tellurium; Thermal conductivity; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on

Conference_Location

Beijing

ISSN

1094-2734

Print_ISBN

0-7803-7205-0

Type

conf

DOI

10.1109/ICT.2001.979829

Filename

979829