A single-chip 1.9 GHz RF transceiver MMIC using GaAs MESFET

Author

Huainan Ma ; Rajinder Singh ; Kai Tuan Yan ; Sher Jiun Fang ; Fujiang Lin ; Khen-Sang Tan ; Shibatal, J. ; Tamura, A. ; Nakamura, H.

Author_Institution

Inst. of Microelectron., Singapore

fYear

1998

fDate

11-8 June 1998

Firstpage

101

Lastpage

104

Abstract

This paper presents a newly developed single-chip RF transceiver MMIC for 1.9 GHz PHS wireless communications using a GaAs MESFET technology. The MMIC features a complete RF transceiver which includes an SPDT switch, a 2-stage LNA, a down-mixer, a double balanced up-mixer, an AGC amplifier and a 2-stage PA with an automatic gate-bias control circuit. The transceiver also features on-chip 50 /spl Omega/ impedance matching, with a chip size of 9.3 mm/sup 2/ and packaged in a 48 pin TQFP with heat sink.

Keywords

III-V semiconductors; MESFET integrated circuits; field effect MMIC; gallium arsenide; land mobile radio; transceivers; 1.9 GHz; AGC amplifier; GaAs; GaAs MESFET; LNA; PA; PHS wireless communication; SPDT switch; TQFP package; automatic gate-bias control circuit; double balanced up-mixer; down-mixer; heat sink; impedance matching; single-chip RF transceiver MMIC; Communication switching; Gallium arsenide; MESFETs; MMICs; Radio frequency; Radiofrequency amplifiers; Switches; Switching circuits; Transceivers; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE

Conference_Location

Baltimore, MD, USA

ISSN

1097-2633

Print_ISBN

0-7803-4439-1

Type

conf

DOI

10.1109/RFIC.1998.682057

Filename

682057