A single-chip PHS front-end MMIC with a true single +3 V voltage supply

Author

Tsutsumi, T. ; Kawaoka, Y. ; Katamata, T. ; Yamamoto, T. ; Marukawa, T. ; Okui, F. ; Fukuda, S. ; Imamura, E. ; Grace, E.

Author_Institution

RF Semicond. Products Dept., Murata Manuf. Co. Ltd., Shiga, Japan

fYear

1998

fDate

11-8 June 1998

Firstpage

105

Lastpage

108

Abstract

A small single-chip PHS RF front-end GaAs MMIC operating with single +3V supply voltage has been developed. This MMIC integrates transmitter power-amplifier, receiver LNA, switchable attenuator, RX/TX switches, and control logic in a single-chip. Unlike conventional GaAs MESFET technology, the new power GaAs MESFET incorporated in this chip does not require negative voltage gate bias, and as a result, the MMIC can be operated by a true single-supply voltage without internal or external negative voltage generator.

Keywords

III-V semiconductors; MESFET integrated circuits; field effect MMIC; gallium arsenide; land mobile radio; 3 V; GaAs; GaAs MESFET; RX/TX switch; control logic; receiver LNA; single-chip PHS RF front-end MMIC; single-supply voltage; switchable attenuator; transmitter power-amplifier; Attenuators; Gallium arsenide; Logic; MESFETs; MMICs; Power generation; Radio frequency; Switches; Transmitters; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE

Conference_Location

Baltimore, MD, USA

ISSN

1097-2633

Print_ISBN

0-7803-4439-1

Type

conf

DOI

10.1109/RFIC.1998.682058

Filename

682058