• DocumentCode
    2174406
  • Title

    Avalanche noise in In0.53Ga0.47As avalanching regions

  • Author

    Goh, Y.L. ; Tan, C.H. ; Ng, J.S. ; Ng, W.K. ; David, J.P.R.

  • Author_Institution
    Dept. of Electron. & Electr. Eng., Univ. of Sheffield, UK
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    428
  • Lastpage
    431
  • Abstract
    Pure electron injection multiplication noise of In0.53Ga0.47As has been measured on three In0.53Ga0.47As diode with avalanche widths of 1.8 μm, 3.2 μm and 4.8 μm. Very low excess noise has been measured and the associated electron to hole ionisation coefficient ratio is from 3.3 to 5. The results confirm the previously reported large ionisation coefficient ratios at fields between 155 kVcm-1 and 310 kVcm-1.
  • Keywords
    III-V semiconductors; avalanche photodiodes; electron impact ionisation; gallium arsenide; indium compounds; semiconductor device noise; In0.53Ga0.47As; In0.53Ga0.47As diode; avalanche noise region; electron injection multiplication noise; electron ionisation coefficient ratio; hole ionisation coefficient ratio; Charge carrier processes; Electrons; Impact ionization; Indium phosphide; Noise measurement; P-i-n diodes; PIN photodiodes; Photoconductivity; Signal to noise ratio; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517521
  • Filename
    1517521
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2174406