• DocumentCode
    2174586
  • Title

    Degradation of metamorphic InGaAs Esaki tunnel diodes due to electrode diffusion and impurity interdiffusion

  • Author

    Ono, Hideki ; Yanagita, Masashi ; Taniguchi, Satoshi ; Suzuki, Toshi-kazu

  • Author_Institution
    Adv. Devices R&D Dept., Sony Corp., Kanagawa
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    445
  • Lastpage
    448
  • Abstract
    We have investigated degradation of metamorphic In0.53Ga0.47As Esaki tunnel diodes. The degradation due to electrode diffusion and impurity interdiffusion is more prominent than that of lattice-matched In0.53Ga0.47 As Esaki tunnel diodes
  • Keywords
    III-V semiconductors; chemical interdiffusion; gallium arsenide; indium compounds; tunnel diodes; InGaAs; degradation; electrode diffusion; impurity interdiffusion; lattice-matched In0.53Ga0.47As Esaki tunnel diodes; metamorphic InGaAs Esaki tunnel diodes; Degradation; Electrodes; Gallium arsenide; Gold; Impurities; Indium gallium arsenide; Lattices; Light emitting diodes; Semiconductor diodes; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • Conference_Location
    Glasgow, Scotland
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517527
  • Filename
    1517527
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2174586