• DocumentCode
    2174634
  • Title

    Design and performance of InP/GaInAs/InP abrupt DHBTs

  • Author

    Elias, D. Cohen ; Kraus, S. ; Gavrilov, A. ; Cohen, S. ; Buadana, N. ; Sidorov, V. ; Ritter, D.

  • Author_Institution
    Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    449
  • Lastpage
    451
  • Abstract
    We discuss the field collapse threshold in abrupt DHBTs in which the barrier between the base and the collector is eliminated by delta doping. A DHBT with 150 nm thick collector operating at a current density of 4 mA/mum2 is presented. We show theoretically that the carrier density at the onset of the filed collapse effect can be doubled by inserting an additional delta doped layer at the center of the collector
  • Keywords
    III-V semiconductors; carrier density; current density; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; semiconductor doping; DHBT; InP-GaInAs-InP; carrier density; collapse effect; current density; delta doping; Aluminum; Charge carrier density; Critical current density; Current density; Doping; Double heterojunction bipolar transistors; Frequency; Indium phosphide; Voltage; Wet etching;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • Conference_Location
    Glasgow, Scotland
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517528
  • Filename
    1517528
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2174634