DocumentCode
2175002
Title
Multi-4 in. production MBE system review for the growth of mixed P-based heterostructures, for optoelectronic applications
Author
Wilk, A. ; Godey, S. ; Marcadet, X. ; Gerard, P. ; Mollot, F. ; Chaix, C.
Author_Institution
RIBER Process Technol. Center, Rueil-Malmaison
fYear
2005
fDate
8-12 May 2005
Firstpage
495
Lastpage
498
Abstract
MBE-growth conditions of mixed As/P and P-based heterostructures are studied. The objective is to improve their optical and structural characteristics. Growths were performed on multiwafer production system. Successive campaign data and maintenance procedure are presented
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; GaAsP-GaInP; MBE-growth conditions; P-based heterostructures; multiwafer production system; optical characteristics; optoelectronic applications; structural characteristics; Data communication; Indium phosphide; Molecular beam epitaxial growth; Power lasers; Printing; Production systems; Quantum cascade lasers; Quantum well devices; Telecommunications; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517540
Filename
1517540
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