• DocumentCode
    2175409
  • Title

    High figure of merit ZT in PbTe and Bi2Te3 based superlattice structures by thermal conductivity reduction

  • Author

    Lambrecht, A. ; Beyer, H. ; Nurnus, J. ; Künzel, C. ; Böttner, H.

  • Author_Institution
    Fraunhofer Inst. Physikalische Messtechnik, Freiburg, Germany
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    335
  • Lastpage
    339
  • Abstract
    In superlattice (SL) structures an enhancement of the thermoelectric figure of merit ZT compared to homogeneous materials can be achieved by reduction of the thermal conductivity λ. In this context thermoelectric properties of PbTe/ PbSexTe1-x -SL´s, and PbTe(BaF2) doping superlattices (SL), and of Bi2(SexTe1-x)3/Bi2 (SeyTe1-y)3-SL structures are presented. All samples were grown on BaF2(111)-substrates by molecular beam epitaxy (MBE). A significant reduction of the in-plane thermal conductivity λ compared to corresponding bulk materials was observed. As the power factors are only slightly reduced, a net increase of the figure of merit ZT can be calculated. The temperature dependence of ZT is discussed
  • Keywords
    IV-VI semiconductors; barium compounds; bismuth compounds; lead compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor materials; semiconductor superlattices; thermal conductivity; thermoelectricity; BaF2(111)-substrates; Bi2(SexTe1-x)3-Bi 2(SeyTe1-y)3; Bi2(SexTe1-x)3/Bi 2(SeyTe1-y)3; Bi2Te3; PbTe; PbTe(BaF2) doping superlattices; PbTe-PbSexTe1-x; PbTe/PbSexTe1-x; PbTe:BaF2; high figure of merit; in-plane thermal conductivity; molecular beam epitaxy; power factors; superlattice structures; thermal conductivity reduction; thermoelectric figure of merit; Bismuth; Conducting materials; Doping; Molecular beam epitaxial growth; Reactive power; Superlattices; Tellurium; Temperature dependence; Thermal conductivity; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
  • Conference_Location
    Beijing
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-7205-0
  • Type

    conf

  • DOI
    10.1109/ICT.2001.979900
  • Filename
    979900