DocumentCode
2175571
Title
Picosecond free-carrier recombination in indium phosphide photonic crystals
Author
Holzman, J.F. ; Strasser, P. ; Wüest, R. ; Robin, F. ; Erni, D. ; Jäckel, H.
Author_Institution
Electron. Lab., Swiss Fed. Inst. of Technol., Zurich
fYear
2005
fDate
8-12 May 2005
Firstpage
570
Lastpage
573
Abstract
Free-carrier generation and recombination dynamics are studied in InP photonic crystals using an ultrafast time-resolved reflectivity setup. It is found that the free-carrier lifetime depends strongly on the overall structure of the photonic crystal lattice
Keywords
III-V semiconductors; carrier lifetime; crystal structure; indium compounds; photonic crystals; surface recombination; InP; free-carrier generation dynamics; free-carrier lifetime; indium phosphide photonic crystals; photonic crystal lattice structure; picosecond free-carrier recombination; ultrafast time-resolved reflectivity; Etching; Indium phosphide; Lattices; Optical modulation; Periodic structures; Photonic crystals; Radiative recombination; Reflectivity; Spontaneous emission; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517561
Filename
1517561
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