DocumentCode
2175632
Title
Polarization anisotropic characteristics of GaInAsP/InP quantum-wire lasers - threshold current and gain spectrum
Author
Maruyama, Takeo ; Plumwongrot, Dhanorm ; Yagi, Hideki ; Miura, Koji ; Nishimoto, Yoshifumi ; Arai, Shigchisa
Author_Institution
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol.
fYear
2005
fDate
8-12 May 2005
Firstpage
582
Lastpage
585
Abstract
Polarization dependent anisotropic lasing characteristics, which are attributed to the anisotropic dipole moment in quantum-wires, wire clearly observed two types of GaInAsP/InP strain-compensated multiple-quantum-wire lasers, where quantum-wires are laid on in parallel and perpendicular to the light propagating direction
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wires; GaInAsP-InP; GalnAsP-InP quantum-wire lasers; anisotropic dipole moment; gain spectrum; light propagation; polarization anisotropic lasing characteristics; threshold current; Anisotropic magnetoresistance; Geometrical optics; Indium phosphide; Laser theory; Optical resonators; Polarization; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517564
Filename
1517564
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