• DocumentCode
    2175707
  • Title

    Review of advanced power device models for converter design and simulation

  • Author

    Bryant, A.T. ; Palmer, Patrick R. ; Santi, Enrico ; Hudgins, Jerry L. ; Mawby, P.A.

  • Author_Institution
    School of Engineering, University of Warwick, Coventry CV4 7AL, United Kingdom
  • fYear
    2007
  • fDate
    20-22 Dec. 2007
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    This paper describes the application of compact power device models to converter design and simulation. Models are summarised for both silicon bipolar devices, such as PIN diodes, IGBTs and thyristors, and silicon carbide unipolar devices, such as Schottky diodes and MOSFETs. Several applications using the models are demonstrated, including simulation of converters under long load cycles. Model implementation and parameter extraction are also discussed.
  • Keywords
    IGBT; diode; power semiconductor device models; silicon carbide; thyristor;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Information and Communication Technology in Electrical Sciences (ICTES 2007), 2007. ICTES. IET-UK International Conference on
  • Conference_Location
    Chennai, Tamilnadu, India
  • ISSN
    0537-9989
  • Type

    conf

  • Filename
    4735970
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2175707