• DocumentCode
    2175893
  • Title

    Integrated cooling for Si-based microelectronics

  • Author

    Fan, Xiaofeng ; Zeng, Gehong ; LaBounty, Chris ; Vashaee, Daryoosh ; Christofferson, James ; Shakouri, Ali ; Bowers, John E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    405
  • Lastpage
    408
  • Abstract
    Thin film thermoelectric coolers are advantageous for their high cooling power density and their potential integrated applications. Si 1-xGex is a good thermoelectric material at high temperatures and superlattice structures can further enhance the device performance. Si1-xGex and Si1-xGex /Si superlattice structures were grown on Si substrates using molecule beam epitaxy. Si1-xGex and Si1-x Gex/Si superlattice thin film microcoolers with film thickness of the order of several microns were fabricated using integrated circuit processing technology. Micro thermocouples and integrated thermistor sensors were used to characterize these coolers. Maximum cooling power density on the order of hundreds of watts per square centimeter was measured at room temperature. It is possible to monolithically integrate these coolers with Si-based microelectronic devices for localized cooling and temperature stabilization
  • Keywords
    Ge-Si alloys; cooling; elemental semiconductors; integrated circuit packaging; molecular beam epitaxial growth; semiconductor materials; semiconductor superlattices; silicon; thermal management (packaging); thermistors; thermocouples; thermoelectricity; Si; Si substrates; Si-based microelectronics; Si1-xGex superlattice structures; Si1-xGex thermoelectric material; Si1-xGex/Si superlattice structures; SiGe; SiGe-Si; coolers; cooling power density; device performance; film thickness; integrated applications; integrated circuit processing technology; integrated cooling; integrated thermistor sensors; localized cooling; localized temperature stabilization; micro thermocouples; microelectronic devices; molecule beam epitaxy; monolithically integrated coolers; superlattice structures; superlattice thin film microcoolers; thin film thermoelectric coolers; Cooling; Microelectronics; Molecular beam epitaxial growth; Substrates; Superlattices; Temperature measurement; Temperature sensors; Thermoelectric devices; Thermoelectricity; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
  • Conference_Location
    Beijing
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-7205-0
  • Type

    conf

  • DOI
    10.1109/ICT.2001.979917
  • Filename
    979917