DocumentCode
2177203
Title
The performance degradation of folded-cascode CMOS op-amp due to hot-carrier effects
Author
Yu, Chong-Gun ; Kim, Hyun-Joong ; Jeong, Woon-Dal ; Park, Jong-Tae
Author_Institution
Dept. of Electron. Eng., Inchon Univ., South Korea
Volume
1
fYear
1997
fDate
3-6 Aug 1997
Firstpage
164
Abstract
This study presents the first experimental data for the impact of CMOS hot-carrier degradation on the performance of folded-cascode op-amps. Two types of folded-cascode op-amps have been designed and fabricated using a 0.8 μm double-metal CMOS process. After high voltage stress, the degradation of performance parameters such as open-loop voltage gain, offset voltage, unity-gain frequency and phase margin has been analyzed and physically explained in terms of hot-carrier degradation
Keywords
CMOS analogue integrated circuits; hot carriers; integrated circuit design; integrated circuit reliability; operational amplifiers; 0.8 micron; double-metal CMOS process; folded-cascode CMOS op-amp; high voltage stress; hot-carrier effects; offset voltage; open-loop voltage gain; phase margin; unity-gain frequency; Analog circuits; Degradation; Frequency; Hot carrier effects; Hot carriers; Operational amplifiers; Performance analysis; Performance gain; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
Conference_Location
Sacramento, CA
Print_ISBN
0-7803-3694-1
Type
conf
DOI
10.1109/MWSCAS.1997.666059
Filename
666059
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