• DocumentCode
    2178628
  • Title

    Band alignment of Ta2O5 on sulphur passivated Germanium by X-ray photoelectron spectroscopy

  • Author

    Althobaiti, M.G. ; Stoner, J. ; Dhanak, V.R. ; Potter, R.J. ; Mitrovic, I.Z.

  • Author_Institution
    Department of Physics and Stephenson Institute of Renewable Energy, University of Liverpool, Liverpool L69 7ZF, UK
  • fYear
    2015
  • fDate
    June 29 2015-July 2 2015
  • Firstpage
    161
  • Lastpage
    163
  • Abstract
    In this work Ta2O5 films were deposited on germanium, by atomic layer deposition (ALD) at 250°C with and without sulphur passivation. X-ray photoelectron spectroscopy (XPS) was carried out to investigate the band line-up of Ta2O5 films with respect to germanium. The results show that the valance band offsets of Ta2O5 with respect to sulphur-passivated and unpassivated Germanium are 2.67 eV and 2.84 respectively. The band gap value of 20 nm thick Ta2O5 films was determined to be 4.44 eV from the electron energy loss spectrum of O1s core level.
  • Keywords
    Films; Germanium; Passivation; Photonic band gap; Substrates; Sulfur; Three-dimensional displays; MOS; Sulphur passivation; Ta2O5; band alignment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ph.D. Research in Microelectronics and Electronics (PRIME), 2015 11th Conference on
  • Conference_Location
    Glasgow, United Kingdom
  • Type

    conf

  • DOI
    10.1109/PRIME.2015.7251359
  • Filename
    7251359
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2178628