An inductorless 900 MHz RF low-noise amplifier in 0.9 μm CMOS

Author

Shin, Young J. ; Bult, Klaas

Author_Institution

Integrated Circuits & Syst. Lab., California Univ., Los Angeles, CA, USA

fYear

1997

fDate

5-8 May 1997

Firstpage

513

Lastpage

516

Abstract

A low cost 900-MHz RF Low-Noise Amplifier is implemented in a standard 0.9 μm digital CMOS process. The design circumvents the use of both expensive external inductors as well as large on-chip inductors, by employing a gyrator circuit to emulate the inductors. This results in a high gain at RF of 20 dB, a tunable resonance frequency and a chip area of only 0.1 mm². At a 940 MHz center frequency, this fully balanced LNA exhibits -23 dB of S11, a 5.3 dB noise figure and an IIP3 of -8.6 dBm. It drains 12.5 mA from a 3.3 V supply

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; circuit tuning; differential amplifiers; gyrators; integrated circuit design; 0.9 micron; 12.5 mA; 20 dB; 3.3 V; 5.3 dB; 900 mHz; CMOS; RF low-noise amplifier; chip area; fully balanced LNA; gyrator circuit; inductor emulation; tunable resonance frequency; CMOS process; Costs; Gyrators; Inductors; Low-noise amplifiers; Process design; Radio frequency; Resonance; Resonant frequency; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997

Conference_Location

Santa Clara, CA

Print_ISBN

0-7803-3669-0

Type

conf

DOI

10.1109/CICC.1997.606678

Filename

606678