DocumentCode
2182653
Title
Chip-on-board (COB) wafer level packaging of LEDs using silicon substrates and chemical foaming process(CFP)-made glass-bubble caps
Author
Yu, Hui ; Shang, Jintang ; Xu, Chao ; Luo, Xinhu ; Liu, Jingdong ; Zhang, Li ; Lai, Chiming
Author_Institution
Key Lab. of MEMS of Minist. of Educ., Southeast Univ., Nanjing, China
fYear
2011
fDate
8-11 Aug. 2011
Firstpage
1
Lastpage
4
Abstract
In this paper, we investigate a novel Chip-On-Board (COB) process for wafer level LED packaging using micro glass-bubble caps and silicon substrates. The COB packaging process is firstly studied experimentally, which consists of the following steps. First, a silicon substrate with lead lines is prepared. Second, LEDs are mounted on the silicon substrate followed by wire-bonding. Third, phosphor is distributed uniformly onto the spherical inner wall surface of glass bubbles. Fourth, the spherical glass bubbles are filled with silica gel. Finally the LEDs on the silicon substrate are encapsulated by the spherical glass-bubble caps. The thermal performance of the LEDs using the COB technology is then simulated by ANSYS and tested. Results show that the COB process is demonstrated successfully and the packaged LED chip has a good thermal and optical performance. Results also indicate that the wafer level COB LED packaging technology using silicon substrates and CFP-made spherical glass-bubble caps would improve the reliability and optical performance of high power white light LEDs greatly.
Keywords
chip-on-board packaging; elemental semiconductors; lead bonding; light emitting diodes; numerical analysis; semiconductor device reliability; silicon; wafer level packaging; ANSYS; CFP; CFP-made spherical glass-bubble caps; COB Wafer Level Packaging; Si; chemical foaming process; chip-on-board wafer level packaging; light emitting diodes; packaged LED chip; reliability; silicon substrates; spherical inner wall surface; wafer level COB LED packaging technology; wafer level LED packaging; wire-bonding; Glass; Light emitting diodes; Packaging; Phosphors; Silicon; Substrates; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4577-1770-3
Electronic_ISBN
978-1-4577-1768-0
Type
conf
DOI
10.1109/ICEPT.2011.6066806
Filename
6066806
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