Effect of LaNiO3 electrode on crystallization of BaTiO3 thin films for capacitors prepared by solgel technique

The conductive LaNiO₃ (LNO) and ferroelectric BaTiO₃ (BTO) thin films had been prepared by sol-gel method. The preparation process of LNO films had been optimized by studying on the effects of annealing temperature and film thickness on their properties and structures. The optimal annealing temperature of LNO films was 700°C. With the increment of film thickness, the surface resistivity of LNO films reduced. It was found that the LNO films, could induce the crystal orientations of BTO thin films, would greatly expand the application of ferroelectric films in the field of capacitors.