Physical Modeling of Microwave Transistors Using a Full-Band/Full-Wave Simulation Approach

Author

Ayubi-Moak, J.S. ; Akis, R. ; Saraniti, M. ; Ferry, D.K. ; Goodnick, S.M.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Glasgow, Glasgow

fYear

2009

fDate

27-29 May 2009

Firstpage

1

Lastpage

4

Abstract

In this work, a full-band Cellular Monte Carlo (CMC) device simulator is self-consistently coupled to an alternate-direction implicit (ADI) finite-difference time-domain (FDTD) full-wave solver. This simulation tool is then used to study the high-frequency response of a dual-finger gate GaAs MESFET via direct S-parameter extraction from time-domain simulation results.

Keywords

III-V semiconductors; Monte Carlo methods; S-parameters; SCF calculations; Schottky gate field effect transistors; finite difference time-domain analysis; frequency response; gallium arsenide; microwave transistors; semiconductor device models; GaAs; alternate-direction implicit FDTD full-wave solver; direct S-parameter extraction; dual-finger gate MESFET; finite-difference time-domain simulation; full-band cellular Monte Carlo device simulator; full-wave electromagnetics; high-frequency response; microwave transistors; self-consistent simulation; semiconductor transport; Engines; Finite difference methods; Frequency; Gallium arsenide; HEMTs; MESFETs; MOSFETs; Microwave transistors; Monte Carlo methods; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2009. IWCE '09. 13th International Workshop on

Conference_Location

Beijing

Print_ISBN

978-1-4244-3925-6

Electronic_ISBN

978-1-4244-3927-0

Type

conf

DOI

10.1109/IWCE.2009.5091139

Filename

5091139