• DocumentCode
    2185009
  • Title

    Modeling and finite-element full-wave simulation of glass interposer with TGVs (through-glass-vias) for 3D packaging

  • Author

    Zhang, Jing ; Sun, Xiaofeng ; Daniel, Guidotti ; Yu, Daquan ; Cao, Liqiang ; Wan, Lixi

  • Author_Institution
    Inst. of Microelectron., Beijing, China
  • fYear
    2011
  • fDate
    8-11 Aug. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    A glass interposer with through-glass-via (TGV) is desirable for three-dimensional system-in-package (3D SiP) integration in order to implement product miniaturization, high density, high performance and integration of different functional chips with minimal signal propagation delay. Based on microwave transmission line theory and coplanar waveguide (CPW) theory, a finite element, full-wave method was used to simulate and analyze the transmission characteristics of TGV vertical interconnections in a glass interposer. The effect of the variations in the TGVs diameter and height, as well as the effect of coupling between two TGVs in the same layer and different layers were studied. Additionally, transmission S21, return loss S11 and electric field distributions are displayed.
  • Keywords
    coplanar waveguides; finite element analysis; glass; integrated circuit interconnections; integrated circuit packaging; system-in-package; three-dimensional integrated circuits; transmission line theory; waveguide theory; 3D SiP; 3D packaging; CPW theory; SiO2; TGV vertical interconnections; coplanar waveguide theory; finite-element full-wave simulation; glass interposer; microwave transmission line theory; signal propagation delay; three-dimensional system-in-package; through-glass-vias; Capacitance; Coplanar waveguides; Crosstalk; Finite element methods; Glass; Silicon; Through-silicon vias;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology and High Density Packaging (ICEPT-HDP), 2011 12th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4577-1770-3
  • Electronic_ISBN
    978-1-4577-1768-0
  • Type

    conf

  • DOI
    10.1109/ICEPT.2011.6066892
  • Filename
    6066892